Workshop – Physics of Wide Bandgap Semiconductors and Devices: Electronic Properties, Photonics, Electron Emission, and Modeling

Overview

The workshop addresses the physics of wide bandgap semiconductors. The focus will be on electronic properties, photonics, electron emission, modeling of materials and devices. The workshop will gather participants, both theoreticians and experimentalists, coming from USA, Asia, and Europe.

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Organizers

• Marcel Filoche (ESPCI)
• Jacques Peretti (Ecole Polytechnique)
• Alistair Rowe (Ecole Polytechnique)
• Jim Speck (University of California, Santa Barbara)
• Claude Weisbuch (Ecole Polytechnique)

Invited Speakers

Ramunas Aleksiejunas

Vilnius University

Ramunas Aleksiejunas received his PhD in Physics from Vilnius University in 2005. After holding various academic and research positions, he became a professor at the Faculty of Physics, Vilnius University, in 2022. His research focuses on the application of optical time- resolved spectroscopic techniques to investigate electron dynamics in semiconductors. A significant part of his work has been devoted to studying non-equilibrium carrier recombination and diffusion processes in disordered materials, primarily In(Al)GaN and perovskite systems. He is also interested in adapting and developing various pump-probe technique modifications for the characterization of different materials and structures—including scintillators, scintillating fibers, oxides, and narrow-bandgap semiconductors—as well as in creating measurement tools based on these methods.

Tyson Back

Air Force Research Laboratory, Dayton

Dr. Tyson Back is a Senior Research Engineer at the Air Force Research Laboratory (AFRL) within the Materials and Manufacturing Directorate. He is part of the Electronic Materials research team, where he investigates the fundamental properties of interfaces in wide band gap semiconductor materials.

Aurélien David

Google

Aurelien has 20 years of experience in industrial R&D on III-nitride LEDs. After a PhD at Ecole Polytechnique and UCSB, he developed high-efficiency LEDs at Lumileds and at Soraa, and currently leads a device development team in Google's microLED division. His research on the physics of InGaN LEDs spans academic and applied aspects.

Jean-Yves Duboz

CHREA

Jean-Yves Duboz is a specialized in electronic and optical properties of semiconductors and related heterostructures, in particular III-V semiconductors. His field of expertise also includes the physics of devices, in particular optoelectronic devices. Born in 1964, he studied the physics at Ecole Normale Supérieure (Ulm), got his PhD in Grenoble in 1990 and his HDR degree in 2001 in Orsay. After his PhD at CNET-Grenoble working on Si-silicide heterostructures, he spent one year at IBM- T.J.Watson, Yorktown Heights (USA) working on InGaAs/InAlAs HEMTs. Then he joined the “Laboratoire Central de Recherche” - Thomson-CSF (later called Thales) in Orsay (France). He spent 10 years studying intersubband transitions and developing QWIP detectors first, and then UV detectors based on AlGaN. He took the responsability of the physics group in 1999. In 2001-2002 he spent one year at the National Research Council of Canada in Ottawa, working on quantum dot detectors and diluted nitrides. In 2002 he joined CNRS to work in the field of GaN based lasers and nanophotonic devices. He is currently involved in the development of metasurfaces, UV LEDs and high energy proton detectors based on GaN.

Saulius Marcinkevicius

KTH

Saulius Marcinkevicius has received MSc degree in Physics in 1981 from Vilnius University and PhD in Semiconductor Physics in 1986 from Semiconductor Physics Institute in Vilnius, Lithuania. Since 1992 he has had various positions at KTH Royal Institute of Technology, Stockholm, Sweden. He has been appointed a professor at KTH in 2009, and currently works in the Department of Applied Physics. His main research interests are in semiconductor optics; in particular, optical and electronic properties of wide band gap materials, nanostructures and devices.

Tony Peaker

University of Manchester

I am an experimentalist working on recombination and defects in semiconductors. I have spent an important part of my career working in the semiconductor industry in the UK and USA as researcher, manager and consultant. Most of this has been associated with the impact of point defects on devices. These include light emitting diodes, optical communication devices, CMOS, solar cells and power devices. My university work has focused on understanding the properties of point and extended defects including techniques for their measurement. Although most of my work has been on Si, SiGe, SiC and III-V compounds my recent interests have moved to wide gap materials particularly AlGaN and GaO.

Luca Perfetti

Ecole Polytechnique

Michael Reshchik

VCU

Michael Reshchikov received his PhD in Physics and Mathematics from Ioffe Physical- Technical Institute in St. Petersburg, Russia, where he held full-time research positions from 1982 to 1997. He then moved to the USA, where he worked for two years at Northwestern University. Since 1999, he has been working at Virginia Commonwealth University (VCU) in Richmond, Virginia. He is currently a Professor at the VCU Physics Department. Dr. Reshchikov is an expert in photoluminescence from semiconductors and in the physics of point defects in semiconductors. He has authored and co-authored more than 200 research papers and seven book chapters.

Mylène Sauty

CEA Saclay

Mylène Sauty is a researcher at CEA Saclay, France. Her research interests are in the combination of spectroscopy and microscopy techniques to study the optoelectronic properties of matter. She uses techniques such as time resolved photoemission electron microscopy, transient absorption spectroscopy and scanning tunneling electron microscopy. She has in particular studied the properties of nitride semiconductor compounds, famous for their application for LEDs. After graduating from Ecole Normale Supérieure in Paris, she obtained a PhD from Ecole Polytechnique in 2022. She was then a post-doctorate research associate in the Cavendish laboratory in Cambridge before joining the CEA for a researcher position.

Jelena Sjakste

Ecole Polytechnique

Jelena Sjakste is a researcher in CNRS (Centre National de Recherche Scientifique), France. She works in Laboratoire des Solides Irradiés, Ecole Polytechnique. She has studied physics in Saint-Pétersbourg State University, Russia as well as in at Ecole Normale Supérieure, Paris, France. She obtained her PhD in 2004 at Université Paris-Sud, France. Her research interests include theoretical and computational studies, with DFT-based methods, of the electron-phonon coupling in semiconductors and their nanostructures, the time-resolved dynamics of photoexcited carrier relaxation, as well as the study of carrier, heat and thermoelectric transport properties of materials. She is developer of EPIQ code: https://the-epiq-team.gitlab.io/epiq-site/.

Vladimir Strokov

PSI

Vladimir N. Strocov earned his PhD from St. Petersburg State University. His scientific career included research positions at Chalmers University of Technology (Sweden), Université de la Méditerranée (France), and Universität Augsburg (Germany). He advanced the experimental and theoretical methodology of Very-Low-Energy Electron Diffraction as a spectroscopic tool to probe photoemission final-state dispersions and lifetimes, enabling reliable determination of three- dimensional electronic band structures from ARPES. Since 2004, he has been a beamline scientist in the Spectroscopy of Quantum Materials group at the Paul Scherrer Institute, focusing on soft-X-ray ARPES at the ADRESS beamline of the Swiss Light Source. His work has advanced the spectroscopic capabilities of this technique from conventional surface science to electronic structure of materials relevant for electronic, spintronic, and quantum technologies such as buried oxide and semiconductor nanostructures, semiconductor/superconductor interfaces, magnetic impurities in semiconductors and topological materials, etc.

Tanay Tak

UCSB

Tanay Tak is a Ph.D. student in the Materials Department at the University of California, Santa Barbara where he works under the guidance of Profs. James Speck, Steven DenBaars, and Claude Weisbuch. His research focus is on advancing the fundamental understanding and usage of III-N materials and devices. In particular, he has a glimpse into the inner workings of devices under operating conditions by employing electron emission- spectroscopy and -microscopy techniques.

Tsung-Yin Tsai

UCSB

Tsung-Yin Tsai is currently a Postdoctoral Associate at UC Santa Barbara under the supervision of Professor James S. Speck. He received his Ph.D. at the Graduate Institute of Photonics and Optoelectronics, National Taiwan University. His current research interests include III-nitride-based long wavelength light emitting diodes and understanding the role of natural alloy disorder in the physical properties of semiconductors via numerical simulations. Additionally, his previous work was to develop numerical tools for electronic band structure calculations and device modeling, which included InAs/InAsSb superlattice photoconductors, Mo x W 1-x S 2 alloys, Graphene/SnS 2 photodetectors, and GaN-based high electron mobility transistors.

Yuh-Renn Wu

NTU

Professor and Chairman of the Graduate Institute of Photonics and Optoelectronics (National Taiwan University) Yuh-Renn Wu studies the physics of electronic devices and develops tools for their numerical simulation, notably for nitride-based LEDs, organic LEDs, solar cells, high-mobility transistors and devices based on two-dimensional materials. He has developed a series of simulation tools widely used in academia and industry. He has implemented Marcel Filoche’s localization landscape theory, enabling them to efficiently simulate 3D quantum transport in devices based on disordered alloys.

Rinat Yapparov

KTH

Rinat Yapparov obtained his PhD in Physics in 2022 from KTH Royal Institute of Technology, Stockholm, following his MSc degree in Physics of metals in 2015 from National Research Nuclear University MEPhI, Moscow. The research interests are optical properties of III- nitride materials and devices, studied by time-integrated and time-resolved near-field and far-field PL spectroscopy at various temperatures.

Doug Yoder

Georgia Tech

Dr. P. D. Yoder is an Associate Professor in the School of Electrical and Computer Engineering at Georgia Tech. He received the B.S.E.E. degree (with highest honors) from Cornell University, Ithaca, NY in 1990. He was a 1990 recipient of the Hertz Foundation Graduate Research Grant at the University of Illinois at Urbana-Champaign, where he earned the M.S. and Ph.D. degrees in 1991 and 1993, respectively. Upon graduation, he accepted a postdoctoral fellowship with the Swiss Federal Institute of Technology in Zurich, Switzerland. He subsequently worked as a Member of Technical Staff at Bell Laboratories in Murray Hill, NJ, and then with its micro-/opto-electronics spin-off, Agere Systems. Dr. Yoder joined the faculty of Georgia Tech in Fall 2003, and was recognized in 2009 with a U. S. Air Force Summer Faculty Fellowship. Dr. Yoder is a member of Tau Beta Pi, Eta Kappa Nu, and a senior member of the IEEE.