Quantum Electronic Device Laboratory

My research focuses on investigating novel low-dimensional materials and nanostructures to expand the frontiers of classical nanoelectronics, cryogenic electronics, and quantum technologies. Our research takes a multi-disciplinary approach to address the scalability issue of both CMOS technologies and quantum computing, with the advancement of fundamental knowledge spanning from material science, classical semiconductor devices, and condensed matter physics.

Education

Ph.D., Electrical Engineering, 2019 Purdue University, West Lafayette, IN, United States
B. Sc, Microelectronics, Peking University, Beijing, China

Professional Background

Semiconductor devices; low-dimensional materials; condensed matter physics; solid state physics

Honors and Awards

2022 APS Early Career Scientists (FECS) Mini Grant for March Meeting
2019-2020 Bilsland Dissertation Fellowship, Purdue University
2014-2016 Birck Williams Scholarship, Purdue University
2013 Li Yanhong Scholarship (Top 5% students) Peking University
2013 National Science and Technology Innovation Scholarship, Science and Technology Department of China

Selected Publications

G. Qiu, H.-Y. Yang, L. Hu, H. Zhang, C.-Y. Chen, Y. Lyu, C. Eckberg, P. Deng, S. Krylyuk, and A. V. Davydov, “Concurrent Ferromagnetism and Superconductivity in Fe(Te, Se) van der Waals Josephson Junctions,” Nature Communications (in print) 2023.

Z. Wan*, G. Qiu*, H. Ren, Q. Qian, D. Xu, J. Zhou, J. Zhou, B. Zhou, L. Wang, and Y. Huang, “Signatures of Chiral Superconductivity in Chiral Molecule Intercalated Tantalum Disulfide,” arXiv preprint arXiv:2302.05078, 2023. (*equal contributions)

G. Qiu, P. Zhang, P. Deng, S. K. Chong, L. Tai, C. Eckberg, and K. L. Wang, “Mesoscopic Transport of Quantum Anomalous Hall Effect in the Submicron Size Regime,” Physical Review Letters, 128 (21), 217704, 2022.

G. Qiu, C. Niu, Y. Wang, M. Si, Z. Zhang, W. Wu, and P. D. Ye, “Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene,” Nature Nanotechnology, 15 (7), 585-591, 2020.

G. Qiu, S. Huang, M. Segovia, P. K. Venuthurumilli, Y. Wang, W. Wu, X. Xu, and P. D. Ye, “Thermoelectric Performance of 2D Tellurium with Accumulation Contacts,” Nano Letters, 19 (3), 1955–1962, 2019.

J.-K. Qin, P.-Y. Liao, M. Si, S. Gao, G. Qiu, J. Jian, Q. Wang, S.-Q. Zhang, S. Huang, and A. Charnas, “Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes,” Nature electronics, 3 (3), 141-147, 2020.

M. Si, A. K. Saha, S. Gao, G. Qiu, J. Qin, Y. Duan, J. Jian, C. Niu, H. Wang, W. Wu, and, P. Ye “A ferroelectric semiconductor field-effect transistor,” Nature Electronics, 2 (12), 580-586, 2019.

G. Qiu, Y. Wang, Y. Nie, Y. Zheng, K. Cho, W. Wu, and P. D. Ye, “Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene,” Nano Letters, 18 (9), 5760–5767, 2018.

Y. Wang, * G. Qiu*, R. Wang, S. Huang, Q. Wang, Y. Liu, Y. Du, W. A. Goddard III, M. J. Kim, and X. Xu, “Field-effect transistors made from solution-grown two-dimensional tellurene,” Nature Electronics, 1 (4), 228-236, 2018. (*equal contributions)