BHARAT JALAN

Our group focuses on the growth of thin films and heterostructures of quantum materials using one-atom-at-a-time. We employ novel hybrid molecular beam epitaxy (MBE) method to do this. Our interests are in the various areas of materials science, materials chemistry & physics: the synthesis of quantum materials with atomic layer control over thickness and composition to understand, and control the interplay between lattice, charge and spin degree of freedom and their coupling to the functionality such as transport, magnetism, superconductivity, strongly-correlated Mott-Hubbard-type insulator characteristics and structural and electronic phase transition. The central theme in our group is to synthesize "built-to-order" structures with the improved structure and electronic quality as needed for fundamental science and applications in electronic devices. Current focus is on the perovskite-based quantum materials and their heterostructures (specifically, titanates and stannates) with particular emphasis on their synthesis with excellent control over stoichiometry, dimensionality and strain. The work in our group is highly collaborative and utilizes a range of structural and electrical characterization techniques available both at the University of Minnesota and in the national laboratory network in addition to through collaboration with experts around the world.

Awards

• Presidential Early Career Awards for Scientists and Engineers (PECASE), 2019
• AVS Paul Holloway Young Investigator Award, 2017
• American Association for Crystal Growth Young Author Award, 2017
• International MBE Young Investigator Award, 2016
• AFOSR YIP Award, 2016
• MRS Graduate Student Gold Award, USA 2010
• Student MBE Award, International MBE Conference, Germany 2010
• Young Scientist Award, PCSI Conference, USA 2009

Selected Publications

• L. R. Thoutam, J. Yue, A. Prakash, T. Wang, K. E. Elangovan, and B. Jalan, “Electrostatic control of insulator–metal transition in La-doped SrSnO3 films” ACS Appl. Mater. Interfaces11 (8), 7666 (2019)
• L. Thoutam, J. Yue, P. Xu and B. Jalan, “Hopping transport in SrTiO3/NdTiO3-x/SrTiO3 heterostructures”Phys. Rev. Mater. 3, 065006 (2019).
• T. Wang, A. Prakash, Y. Dong, T. Truttmann, A. Bucsek, R. James, D. D. Fong, J.-W. Kim, P. J. Ryan, H. Zhou, T. Birol, and B. Jalan, “Engineering SrSnO3 Phases and Electron Mobility at Room Temperature using Epitaxial Strain” ACS Appl. Mater. & Interfaces (2018).
• J. Yue, A. Prakash, M. Robbins, S. Koester, and B. Jalan, “Depletion Mode MOSFET using La-doped BaSnO3 as a Channel Material” ACS Appl. Mater. & Interfaces 10, 21061 (2018)
• W. Nunn, A. Prakash, A. Bhowmik, R. Haislmaier, J. Yue, J. M. Garcia Lastra, and B. Jalan, “Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy- grown BaSnO3 films” APL Mater. APL Mater. 6, 066107 (2018)
• T. Wang, L. R. Thoutam, A. Prakash, W. Nunn, G. Haugstad, and B. Jalan, “Defect-driven localization crossovers in MBE-grown La-doped SrSnO3 films” Phys. Rev. Mater. (Rapid Communication) 1, 061601(R) (2017)
• A. Prakash, P. Xu, A. Faghaninia, S. Shukla, J. W. Ager III, C. S. Lo, and B. Jalan, “Wide Bandgap BaSnO3 Films with Room Temperature Conductivity Exceeding 104 Scm-1” Nat. Comm. 8, 15167 (2017)
• P. Xu, Y. Ayino, C. Cheng, V. S. Pribiag, R. B. Comes, P. V. Sushko, S. A. Chambers, and B. Jalan, “Predictive control over charge density in the two-dimensional electron gas at the polar/non-polar NdTiO3/SrTiO3 interface”, Phys. Rev. Lett. 117, 106803 (2016)