Boris Shklovskii

Boris Shklovskii
A.S. Fine Chair in Theoretical Physics; Professor , School of Physics and AstronomyContact
John T. Tate Hall Room 275-10 116 Church Street SeMinneapolis, MN 55455
Affiliations
William I. Fine Theoretical Physics Institute (FTPI)
Education
Ph.D., Ioffe Institute, 1968
A. B., Leningrad University, 1966
Professional Background
Director of Theoretical Physics Institute, 1995-98
Research Interests
Theory of transport and electron-electron correlations in disordered systems, quantum Hall effect, hopping conduction, metal-nonmetal transition and transport in nano-crystal films.
Honors and Awards
- APS Buckley Prize, 2019
- Fellow, American Physical Society, 1994
- A.S. Fine Chair in Theoretical Physics, 1990
- Landau Prize of Academy of Sciences of USSR, 1986
Books
- B.I. Shklovskii, and A.L.Efros, “Electronic Properties of Doped Semiconductors”, Springer, Heidelberg (1984) Available from Amazon.com or viewable in Google Drive
- Appendix, 40 years after is viewable in Google Docs
Selected Publications
Full list of publications
Direct Access to Published Papers
- Y. Huang, C.-H. Sheu, B. Shklovskii, Plasmons in Semiconductor and Topological Insulator Wires with Large Dielectric Constant (2022)
- Y. Huang, B. Skinner, B. Shklovskii, Conductivity of Two-dimensional Small Gap Semiconductors and Topological Insulators in Strong Coulomb Disorder (2022)
- Y. Huang. Y. He, B. Skinner, B. Shklovskii, Conductivity of Two-dimensional Narrow Gap Semiconductors Subjected to Strong Coulomb Disorder (2021)
- Y. Huang, B. Shklovskii, Disorder effects in topological insulator nanowires, Phys. Rev. B 104, 054205 (2021)
- Y. Huang, Y. Ayino, B. Shklovskii, Metal-Insulator Transition in n-type bulk crystals and films of strongly compensated SrTiO3, Phys. Rev. Materials 5, 044606 (2021)
- Y. Huang, B. Shklovskii, Disorder Effects in Topological Insulator Thin Films, Phys. Rev. B 103, 165409 (2021)
- X. Fu, Y. Huang, Q. Shi, B. Shklovskii, M. Zudov, G. Gardner, M. Manfra, Hidden Quantum Hall Stripes in AlxGa1−xAs/Al0.24Ga0.76 As Quantum Wells, Phys. Rev. Lett. 125, 236803 (2020)
- Y. Huang, B. Shklovskii, Spectral rigidity of non-Hermitian symmetric random matrices near Anderson transition, Phys. Rev. B 102, 064212 (2020)
- M. Sammon and B. Shklovskii, Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers, Phys. Rev. B 99, 165403 (2019)
- T. Chen, K. Reich, N. Kramer, H. Fu, U. Kortshagen, B. Shklovskii, Metal-Insulator transition in doped semiconductor nanocrystal films, Nature Materials, 15, 299 (2016)
- B. Skinner, G. Yu, A. Kretinin, A. Geim, K. Novoselov, B. Shklovskii, Effect of dielectric response on the quantum capacitance of graphene in a strong magnetic field, Phys. Rev. B 88, 155417 (2013)
- B. Skinner, T. Chen, B. Shklovskii, Why Is the Bulk Resistivity of Topological Insulators So Small?, Phys. Rev. Lett. 109, 176801 (2012)
- M. Fogler, D. Novikov, L. Glazman, B. Shklovskii, Effect of disorder on graphene p-n junction, Phys. Rev. B 77, 075420 (2008)
- T. Hu, B. Shklovskii, Kinetics of viral self-assembly: a role of ss RNA antenna, Phys. Rev. E 75, 051901 (2007)
- B. Shklovskii, Screening of a Macroion by Multivalent ions: Correlation-Induced Inversion of Charge, Phys. Rev. E, 60, 5802 (1999)
- A. Koulakov, M. Fogler, B. Shklovskii, The Ground State of a Two-Dimensional Electron Liquid in a Weak Magnetic Field, Physical Review B, 53 (1996)
Advisees & Collaborators
Graduate Students:
- Yi Huang