Ke WangAssistant Professor, School of Physics and Astronomy
Ph.D., Princeton University, 2014
B.S., University of Science and Technology of China, 2008
Postdoctoral Fellow, Harvard University, 2014-2017
My field of study is experimental condensed matter physics, with a research focus on studying novel quantum physics in gate-defined nanostructures on 2D Van der Waals materials.
Electronic properties of solids can undergo dramatic change when the material thickness is reduced to the atomic limit. Notably, even the band structures of mono-layers and bi-layers can be distinctively different in both graphene and transition metal dichalcogenide. The exotic bandstructures of 2D materials are uniquely different from those in conventional 2DEGs, including relativistic dispersion relationship, displacement-field tunable bandgap, spin-valley locking near band edges, and anisotropic effective mass.
We further tailor these interesting bandstructures to new platforms of studying novel quantum physics. We prepare ultra high quality atomically-thin electronic systems by assembling Van der Waals heterostructures encapsulated in hexagonal boron nitrides, and fabricate gate-defined nanostructures using state-of-the-art lithography techniques. With experimental control over local Hamiltonians, we manipulate spin, layer, valley and sublattice quantum numbers towards realizing novel functional quantum devices in optoelectronics, spintronics, valleytronics and quantum computing, and study new phases of matter such as Dirac fluid, Luttinger liquid, Bell states and non-Abelian fractional quantum Hall excitations.
K-T. Tsai, X. Zhang, Z. Zhu, Y. Luo, S. Carr, M. Luskin, E. Kaxiras, K. Wang, Correlated Superconducting and Insulating States in Twisted Trilayer Graphene Moire of Moire Superlattices, ArXiv:1912.03375 [abstract]
K. Wang, M. M. Elahi, K. M. M. Habib, T. Taniguchi, K. Watanabe, A. W. Ghosh, G.-H. Lee, P. Kim, Graphene Transistor Based on Tunable Dirac-Fermion-Optics, Proc. Natl. Acad. Sci., In Press, (2019). [abstract]
K. Wang, A. Harzheim, T. Taniguchi, K. Watanabe, P. Kim, Tunneling Spectroscopy of Quantum Hall Edge States in Gate-defined Bilayer Graphene PN Networks, Phys. Rev. Lett, In Press, (2019). [abstract]
M. M. Elahi, K. M. M. Habib, K. Wang, G.-H. Lee, P. Kim, A. W. Ghosh, Impact of geometry and non-idealities on electron ‘optics’ based graphene p-n junction devices, Appl. Phys. Lett. 114, 013507 (2019) [abstract]
K. Wang, K. D. Greve, L. A. Jauregui, A. Sushko, A. High, Y. Zhou, G. Scuri, T. Taniguchi, K. Watanabe, M. D. Lukin, H. Park, P. Kim, Electrical Control of Charged Carriers and Excitons in Atomically Thin Materials, Nature Nanotechnology 13, 128–132 (2018). [abstract]
S. Bhandari, K. Wang, K. Watanabe, T. Taniguchi, P. Kim, R. M. Westervelt, Imaging electron flow and quantum dot formation in MoS2 nanostructures, Nanotechnology (2018). [abstract]
D. Wintz*, K. Chaudhary*, K. Wang, L. Jauregui, A. Ambrosio, A. Y. Zhu, R. C. Devlin, M. Tamagnone, J. D. Crossno, K. Watanabe, T. Taniguchi, P. Kim, F. Capasso, Guided Modes of Anisotropic van der Waals Materials Investigated by Near-Field Scanning Optical Microscopy, ACS Photonics (2018) [abstract]
Y. Shimazaki, T. Yoshizawa, I. V. Borzenets, K. Wang, X. Liu, K. Watanabe, T. Taniguchi, P. Kim, M. Yamamoto, and S. Tarucha, Landau level evolution driven by band hybridization in mirror symmetry broken ABA-stacked trilayer graphene, arXiv:1611.02395 [abstract]
J. Crossno, J. Shi, K. Wang, X. Liu, A. Harzheim, A. Lucas, S. Sachdev, P. Kim, T. Taniguchi, K. Watanabe, T. Ohki, K. Fong, Observation of the Dirac fluid and the Breakdown of the Wiedemann-Franz law in Graphene, Science 351, 1058 (2016) [abstract]
X. Mi, T. M. Hazard, X. Mi, K. Wang, J. R. Petta, Magnetotransport Studies of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures, Phys. Rev. B 92 (3), 035304 (2015). [abstract]
D. M. Zajac, T. M. Hazard, X. Mi, K. Wang, J. R. Petta, A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots, Appl. Phys. Lett. 106, 223507 (2015) [abstract]
K. Wang, C. Payette, Y. Dovzhenko, P. W. Deelman J. R. Petta, Charge Relaxation in a Single-electron Si/SiGe Double Quantum Dot, (Editors' Suggestion) Phys. Rev. Lett. 111, 046801 (2013) [abstract]
Y. Dovzhenko, K. Wang, M. D. Schroer, J. R. Petta, Electrically controlling single spin coherence in semiconductor nanostructures, Book chapter in "Quantum Dots: optics, electron transport and future applications", edited by A. Tartakovskii, Cambridge University Press (2012).
C. Payette, K. Wang, P. J. Koppinen, Y. Dovzhenko, J. C. Sturm, J. R. Petta, Single Charge Sensing and Transport in Double quantum dots fabricated from commercially grown Si/SiGe heterostructures, Appl. Phys. Lett. 100, 043508 (2012) [abstract]