RTA (Rapid Thermal Annealer)
Description: Used to rapidly heat a single wafer to temperatures of up to 1150 °C. This technique is generally used for surface repair with minimal dislocation. Also used for metal reflow, dopant activation, thermal oxidation, and chemical vapor deposition.
Substrate Compatibility: 4 inch wafers only. Pieces can be used if placed on a 4 inch carrier wafer.
Location: Keller-Bay 1
Badger Name: K1 RTA RTP600S
Supplemental Material: Temperature Guide