Description: Used for non-chemical etching of thin films. To accomplish this, the chamber is first pumped down to low pressure and then back filled with Argon gas. The Argon is then ionized and accelerated by an electric field toward the substrate. This kinetically energized Ar "sputters" or removes the film from the substrate.
Substrate Compatibility: Varying sizs allowed, from pieces, all the way up to 4 inch wafers.
Location: PAN-Bay 2
Badger Name: P2 Etcher Ion Mill Intivac
Supplemental Material: Rates