Description: Reactive ion etching system with Fl and Cl gases, inductively coupled plasma (ICP), and a load lock. Compatible with normal semiconductor materials such as oxides, silicon, nitride, resists, metals, III-V material, and polymides.
Substrate Compatibility: 4 inch wafers only. Pieces can be used if placed on a 4 inch carrier wafer.
Location: PAN-Bay 2
Badger Name: P2 Etcher Oxford
Supplemental Material: Oxford etch chart