Description: Deep Reactive ion etching system with RF energy coupled into the process gases in the process chamber via the wafer platen, or via an inductive coupling or both simultaneously, depending on the process. For Silicon etching only.
Substrate Compatibilty: 4-inch wafers or smaller. Smaller substrates need to be mounted on carrier wafer with a good thermal transfer bonding agent
Location: Pan bay 1
Badger name: P1 Etcher SPTS