PEALD (Plasma Enhanced Atomic Layer Deposition)

Type: Deposition-CVD

Description: It has a load lock chamber to allow the deposition chamber to remain under vacuum reducing contamination effects of oxygen and water vapor in the films. 

Films: Aluminum oxide, aluminum nitride, titanium oxide, titanium nitride, hafnium oxide, hafnium nitride, and silicon nitride are the current films.

Substrate Compatibility: 4 inch wafers, up to 8 inch.

Location: PAN-Bay 3

Badger Name: P3 PEALD Ultratech

Training: Review SOP prior to requesting training.