PEALD (Plasma Enhanced Atomic Layer Deposition)
Description: It has a load lock chamber to allow the deposition chamber to remain under vacuum reducing contamination effects of oxygen and water vapor in the films.
Films: Aluminum oxide, aluminum nitride, titanium oxide, titanium nitride, hafnium oxide, hafnium nitride, and silicon nitride are the current films.
Substrate Compatibility: 4 inch wafers, up to 8 inch.
Location: PAN-Bay 3
Badger Name: P3 PEALD Ultratech