PECVD (Plasma Enhanced Chemical Vapor Deposition)
Type: Deposition-CVD
Description: Used to deposit thin films using plasma and heat (100 °C to 340 °C).
Films: Silicon nitride, silicon dioxide, and amorphous silicon.
Substrate Compatibility: Varying sizes allowed, from pieces, all the way up to 8 inch wafers.
Location: Keller-Bay 3
Badger Name: K3 PECVD Plasmatherm
Training: Review SOP prior to requesting training.
